In the Nanoscale Magnetic and Electronic Heterostructure Group of the Materials Science Division (MSD) we aim to understand the novel and emergent behavior in nanoscale magnetic and electronic heterostructures. Our focus is on exploring fundamental science governing the behavior of novel materials for ultra-dense, fast synaptic memory for neuromorphic applications.

In this exciting opportunity, we are seeking an assistant materials scientist to contribute to this research to understand the underlying physics of spin and charge based memory materials using advanced in-situ transmission electron microscopy (TEM) methods. The materials and devices would consist of patterned multilayer magnetic thin films, ferroelectric materials such as Zr-doped HfO2, as well as novel quantum materials. Of particular interest is the exploration of time-resolved imaging of material behavior using advanced ultrafast electron microscopy techniques. The in-situ experiments will be driven by external electric fields and relevant optical stimuli. Although exceptional candidates in all areas of experimental condensed matter and materials physics will be considered, particular emphasis will be placed on expertise in materials and phenomena towards use-inspired research relevant to microelectronics. The candidate will be part of a highly interdisciplinary project involving X-ray scientists, physicists, materials scientists, and computational scientists to solve challenging problems in the microelectronics area.

Note: Synthesis of bulk materials, first-principles simulations/modeling, and organic or bio-related areas are not in consideration for this position.

In this position, you will:

Conduct experimental laboratory work with a variety of advanced characterization using TEM (4D-STEM, HR-TEM, compositional mapping (EDX/EELS)).Conduct transport property measurements using probe station.Think and work independently and effectively collaborate to conduct research in a highly interdisciplinary environment of materials scientists, physicists, and chemists

Position Requirements

A Ph.D. in Materials Science, Physics, or a related discipline with 1-3+ years of experienceA strong experimental and theoretical background in conducting in-situ electrical transport measurements applied to nanostructuresExperience with thin film deposition, nanofabrication and patterning of devicesExperience in thin film and nanostructure synthesis and lithographic patterningAbility to model Argonne’s core values of impact, safety, respect, integrity, and teamwork.

This level of knowledge is typically achieved through a formal education in materials science, physics or related discipline at the PhD level or equivalent

Job Family

Research Development (RD)

Job Profile

Materials/Ceramics/Metallurgical 2

Worker Type

Regular

Time Type

Full time

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